dimensions in inches and (millimeters) version: a06 sf801g - sf808g 8.0 amps. glass passivated super fast rectifiers to-220ab features high efficiency, low vf high current capability high reliability high surge current capability low power loss. for use in low voltage, high frequency inventor, free wheeling, and polarity protection application mechanical data case: to-220ab molded plastic epoxy: ul 94v-0 rate flame retardant terminals: pure tin plated, lead free. solderable per mil-std-202, method 208 guaranteed polarity: as marked high temperature soldering guaranteed: 260 o c/10 seconds .16?,(4.06mm) from case. weight: 2.24 grams maximum ratings and electrical characteristics rating at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol sf 801g sf 802g sf 83g sf 804g sf 805g sf 806g sf 807g sf 808g units maximum recurrent peak reverse voltage v rrm 50 100 150 200 300 400 500 600 v maximum rms voltage v rms 35 70 105 140 210 280 350 480 v maximum dc blocking voltage v dc 50 100 150 200 300 400 500 600 v maximum average forward rectified current .375 (9.5mm) lead length @t c = 100 o c i (av) 8.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 125 a maximum instantaneous forward voltage @ 4.0a v f 0.975 1.3 1.7 v maximum dc reverse current @t a =25 o c at rated dc blocking voltage @ t a =100 o c i r 10 400 ua ua maximum reverse recovery tim (note 1) trr 35 ns typical junction capacitance (note 2) cj 70 50 pf typical thermal resistance (note 3) r jc 3.0 o c/w operating temperature range t j t j -65 to +150 o c storage temperature range t stg t stg -65 to +150 o c notes: 1. reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a 2. measured at 1 mhz and applied r everse voltage of 4.0 v d.c. 3. thermal resistance from junction to case mounted on heatsink size of 2? x 3? x 0.25? al-plate.
r a ting s an d characteristi c cu r ve s (sf801 g thr u sf808g) fig.6 - revers e recove r y tim e characteristi c an d tes t circui t diagram 50 noninductive non inductive oscilloscope (not e 1) pulse gener a t or (not e 2) dut (+) 50vdc (approx) (-) notes : 1 . ris e t ime=7n s max . inpu t impedance= 1 megoh m 22pf 2 . ris e t ime=10n s max . sours e impedance= 5 0 ohms (-) (+) 10 noninductive -1.0a -0.25a 0 +0.5a trr 1cm set time base for 5/ 10ns/ cm fig.1- maximum forward current derating curve average for ward current . (a) 0 50 100 150 0 2 4 6 8 10 case temperature. ( c) o fig.2- typical reverse characteristics instantaneous reverse current .( a) 0 20 40 60 80 100 120 140 1000 0.1 1 10 100 percent of rated peak reverse voltage. (%) tj=25 c 0 tj=100 c 0 fig.3- maximum non-repetitive forward surge current peak for ward surge current . (a) 1 2 5 10 20 100 50 150 120 90 60 30 0 number of cycles at 60hz tj=125 c 0 8.3ms single half sine wave jedec method fig.5- typical forward characteristics instantaneous for ward current . (a) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.1 0.03 1.0 0.3 10 3.0 30 100 forward voltage. (v) tj=25 c pulse width=300 s 1% duty cycle o sf801g~sf804g sf805g~sf806g sf807g~sf808g fig.4- typical junction capacitance capacitance.(pf) 15 2 10 20 50 100 200 500 50 60 70 80 90 100 reverse voltage. (v) tj=25 c 0 sf805g~sf808g sf801g~sf804g 40 1000 version: a06
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